by Kyogo Komiyama | Mar 31, 2023 | Business
31 March 2023 DENSO CORPORATION has decided to adopt silicon carbide epitaxial wafer for power semiconductor (SiC epi-wafer) manufactured by Resonac Corporation (Tokyo: 4004) (President: Hidehito Takahashi) with the aim of using it as material for driver element of...
by Kyogo Komiyama | Mar 23, 2023 | R&D
23 March 2023 Resonac Corporation (TOKYO: 4004) (President: Hidehito Takahashi) is set to launch full-scale operation of Power Module Integration Center (“PMiC”), which is located at Oyama Plant in Tochigi Prefecture, to enhance development activity of materials for...
by Kyogo Komiyama | Mar 13, 2023 | R&D
13 March 2023 In January 2023, Resonac Corporation (TOKYO: 4004) (President and CEO: Hidehito Takahashi) is launching a project to develop new semiconductor materials for 6G, the next-generation telecommunication system standard following 5G. Resonac will implement...
by Kyogo Komiyama | Mar 9, 2023 | R&D
09 March 2023 Resonac Corporation (TOKYO: 4004) (President: Hidehito Takahashi) has successfully applied virtual reality (VR) technology*1 to the development of semiconductor materials. This is the first time that the VR technology has been implemented to develop...
by Kyogo Komiyama | Mar 1, 2023 | Business
01 March 2023 Resonac Corporation (Tokyo: 4004, President: Hidehito Takahashi) has developed a third generation of high-grade silicon carbide (SiC) epitaxial wafer (HGE-3G) for power semiconductors and has started to mass-produce it. HGE-3G has quality superior to...
