InP epitaxial wafer
Product Description
These epitaxial wafers form the multi-element-based film of InGaAs, InGaAsP on the InP monocrystal substrate by metal organic chemical vapor deposition(MOCVD).We manufacture and sell epitaxial wafers cutomized to your requests.
Compound composition
Indium gallium arsenide：GaInAs (InGaAs)
Indium gallium arsenide phosphide：GaInAsP (InGaAsP)
Applications
Laser diodes, Light receiving elements (PIN-PD, APD)
Inquirer about product
Please subscribe our technology eNewsletter!
Inquiry about product
Please inquire about product, technology or samples from here.