Resonac Europe

InP epitaxial wafer

Product Description

These epitaxial wafers form the multi-element-based film of InGaAs, InGaAsP on the InP monocrystal substrate by metal organic chemical vapor deposition(MOCVD).We manufacture and sell epitaxial wafers cutomized to your requests.

Compound composition

Indium gallium arsenide:GaInAs (InGaAs)

Indium gallium arsenide phosphide:GaInAsP (InGaAsP)

Applications

Laser diodes, Light receiving elements (PIN-PD, APD)

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